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| inchange semiconductor product specification silicon pnp power transistors 2SB1566 description ? with to-220f package ? excellent dc current gain characteristics ? low collector saturation voltage ? wide soa (safe operating area ) ? complement to type 2sd2395 pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i cm collector current-peak -4.5 a t a =25 ?? 2 p c collector dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB1566 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;i b =0 -50 v v (br)cbo collector-base breakdown voltage i c =-50 | a ;i e =0 -60 v v (br)ebo emitter-base breakdown voltage i e =-50 | a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.0 v v besat base-emitter saturation voltage i c =-2a ;i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-60v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-7v; i c =0 -1.0 | a h fe dc current gain i c =-0.5a ; v ce =-5v 100 320 c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 40 pf f t transition frequency i c =-0.5a ; v ce =-5v 60 mhz ? h fe classifications e f 100-200 160-320 inchange semiconductor product specification 3 silicon pnp power transistors 2SB1566 package outline fig.2 outline dimensions |
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